INTEGRATED CIRCUITS
DATA SHEET
TDA8001
Smart card interface
1996 Dec 12
Product specification
Supersedes data of 1995 Feb 01
File under Integrated Circuits, IC02
Philips Semiconductors
Product specification
Smart card interface
TDA8001
QUICK REFERENCE DATA
SYMBOL
VDD
PARAMETER
supply voltage
CONDITIONS
MIN.
6.7
TYP.
MAX.
18
UNIT
−
V
IDD
supply current
idle mode; VDD = 12 V
active modes; unloaded
−
−
4.5
6
32
45
−
−
5.0
−
−
4.72
6.5
5.25
mA
mA
V
Vth2
Vth4
VCC
threshold voltage on VSUP
threshold voltage on VDD
card supply voltage
V
including static and dynamic
loads on 100 nF capacitor
4.75
V
ICC
card supply current
operating
detection
limitation
−
−
−
−
−
−150
−
−100
−
−200
30
mA
mA
mA
V
VH
high voltage supply for
VPP
−
VPP
card programming
including static and dynamic
P − 2.5%
−
P + 2.5% V
voltage (only at TDA8001 loads on 100 nF capacitor
and TDA8001T)
(P = 5, 12.5, 15 and 21 V)
IPP
SR
programming current
(read or write mode)
operating
detection
limitation
−
−
−
−
−75
−
−50
−
−100
−
mA
mA
mA
slew rate on VCC and VPP maximum load capacitor 150 nF −
(rise and fall)
0.38
V/µs
tde
deactivation cycle duration
clock frequency
75
100
−
−
125
8
µs
MHz
W
fclk
Ptot
0
continuous total power
dissipation
TDA8001; Tamb = +70 °C;
see Fig.10
−
0.92
TDA8001T; Tamb = +70 °C;
see Fig.11
−
−
−
2
W
Tamb
operating ambient
temperature
0
+70
°C
1996 Dec 12
3
Philips Semiconductors
Product specification
Smart card interface
TDA8001
BLOCK DIAGRAM
V
V
GND1
12
DELAY
16
SUP
15
DD
13
17
18
ALARM
ALARM
22
VOLTAGE
SUPERVISOR
MAIN
SUPPLY
CVNC
28
26
3
4
I/O(µC)
I/O
PROTECTIONS
AND
ENABLE
RSTIN
RST
TDA8001
9
8
PRES
PRES
LOGIC
19
2
OFF
INTERNAL
CLOCK
PROTECTIONS
DETECT
14
5
V
20
27
CC
CMDVCC
CMD7
V
CC
GENERATOR
25
23
GND2
CMD3.5
CLOCK
CIRCUITRY
CLOCK
ENABLE
CLK
24
CLKOUT2
6
VPP12.5
V
10
PP
7
V
PP
GENERATOR
VPP15
VPP21
21
OSCILLATOR
1
11
MBH813
XTAL
V
H
Fig.1 Block diagram.
1996 Dec 12
4
Philips Semiconductors
Product specification
Smart card interface
TDA8001
PINNING
PIN
SYMBOL
DESCRIPTION
TDA8001
TDA8001A
TDA8001T TDA8001AT
XTAL
DETECT
I/O
1
2
1
2
crystal connection
card extraction open collector output (active LOW)
data line to/from the card
3
3
RST
4
4
card reset output
CLK
5
5
clock output to the card
VPP12.5
n.c.
6
−
6
control input for applying the 12.5 V programming voltage (active LOW)
not connected
−
VPP15
n.c.
7
−
7
control input for applying the 15 V programming voltage (active LOW)
not connected
−
PRES
PRES
VPP
8
8
card presence contact input (active LOW)
card presence contact input (active HIGH)
card programming voltage output
9
9
10
−
−
n.c.
10
11
12
13
14
15
16
17
18
19
20
−
not connected
VH
11
12
13
14
15
16
17
18
19
20
21
−
HIGH voltage supply for VPP generation
ground 1
GND1
VDD
positive supply voltage
VCC
card supply output voltage
VSUP
voltage supervisor input
DELAY
ALARM
ALARM
OFF
external capacitor connection for delayed reset timing
open-collector reset output for the microcontroller (active HIGH)
open-collector reset output for the microcontroller (active LOW)
open-collector interrupt output to the microcontroller (active LOW)
control input for applying supply voltage to the card (active LOW)
control input for applying the 21 V programming voltage (active LOW)
not connected
CMDVCC
VPP21
n.c.
21
22
CVNC
22
internally generated 5 V reference, present when VDD is on; to be
decoupled externally (100 nF)
CMD3.5
or CDMTC
23
24
23
24
control input for having the crystal frequency divided-by-4 at pin CLK
CLKOUT2
clock output to the microcontroller, or any other R4590
(crystal frequency divided by two)
GND2
RSTIN
25
26
27
25
26
27
ground 2
card reset input from the microcontroller (active HIGH)
control input for having the crystal frequency divided by 2 at pin CLK
CMD7
or CDMS
I/O(µC)
28
28
data line to/from the microcontroller
1996 Dec 12
5
Philips Semiconductors
Product specification
Smart card interface
TDA8001
handbook, halfpage
handbook, halfpage
XTAL
DETECT
I/O
1
2
28 I/O(µC)
XTAL
1
2
28 I/O(µC)
27
26
DETECT
I/O
27
26
CMD7 or CDMS
RSTIN
CMD7 or CDMS
RSTIN
3
3
4
25 GND2
4
25 GND2
RST
RST
CLK
5
24
23
5
24
23
CLK
CLKOUT2
CLKOUT2
VPP12.5
n.c.
6
6
CMD3.5 or CDMTC
CMD3.5 or CDMTC
7
22 CVNC
7
22 CVNC
VPP15
PRES
PRES
n.c.
PRES
PRES
n.c.
TDA8001
TDA8001T
TDA8001A
TDA8001AT
8
21
20
19
18
8
21
20
19
18
VPP21
CMDVCC
OFF
n.c.
9
9
CMDVCC
OFF
V
10
11
10
11
PP
V
H
V
H
ALARM
ALARM
GND1 12
17 ALARM
16 DELAY
GND1 12
17 ALARM
16 DELAY
V
V
V
V
13
14
13
14
DD
CC
DD
CC
V
V
SUP
15
15
SUP
MBH811
MBH812
Fig.2 Pin configuration.
Fig.3 Pin configuration.
1996 Dec 12
6
Philips Semiconductors
Product specification
Smart card interface
TDA8001
CMD3.5 and internal ENRST are sampled in order to give
the first clock pulse the correct width, and to avoid false
pulses during frequency change.
FUNCTIONAL DESCRIPTION
Power supply
The circuit operates within a supply voltage range of
6.7 to 18 V. VDD and GND are the supply pins. All card
contacts remain inactive during power up or down.
The CLKOUT2 pins may be used to clock a
microcontroller or an other TDA8001. The signal 1⁄2 fxtal is
available when the circuit is powered up.
POWER UP
State diagram
The logic part is powered first and is in the reset condition
until VDD reaches Vth1. The sequencer is blocked until VDD
Once activated, the circuit has six possible modes of
operation:
reaches Vth4 + Vhys4
.
• Idle
• Activation
• Read
POWER DOWN
When VDD falls below Vth4, an automatic deactivation of
the contacts is performed.
• Write
• Deactivation
• Fault.
Voltage supervisor
This block surveys the 5 V supply of the microcontroller
(VSUP) in order to deliver a defined reset pulse and to avoid
any transients on card contacts during power up or down
of VSUP. The voltage supervisor remains active even if VDD
is powered-down.
Figure 6 shows the way these modes are accessible.
IDLE MODE
After reset, the circuit enters the IDLE state. A minimum
number of circuits are active while waiting for the
microcontroller to start a session.
POWER ON
• All card contacts are inactive
As long as VSUP is below Vth2 + Vhys2 the capacitor CDEL
,
connected to pin DELAY, will be discharged. When VSUP
rises to the threshold level, CDEL will be recharged.
ALARM and ALARM remain active, and the sequencer is
• I/O(µC) is high impedance
• Voltage generators are stopped
• Oscillator or XTAL input is running, delivering CLKOUT2
• Voltage supervisors are active.
blocked until the voltage on the DELAY line reaches Vth3
.
POWER DOWN (see Fig.4)
The DETECT line is HIGH if a card is present (PRES and
PRES active) and LOW if a card is not present. The OFF
line is HIGH if no hardware problem is detected.
If VSUP falls below Vth2, CDEL will be discharged, ALARM
and ALARM become active, and an automatic deactivation
of the contacts is performed.
ACTIVATION SEQUENCE
Clock circuitry (see Fig.5)
From the IDLE mode, the circuit enters the ACTIVATION
mode when the microcontroller sets the CMDVCC line
(active LOW). The I/O(µC) signal must not be LOW.
The internal circuitry is activated, the internal clock starts
and the sequence according to ISO7816 is performed:
The clock signal (CLK) can be applied to the card in two
different methods:
1. Generation by a crystal oscillator: the crystal, or the
ceramic resonator (4 to 16 MHz) is connected to the
XTAL pin.
• VCC rises from 0 to 5 V
2. Use of a signal frequency (up to 20 MHz), already
present in the system and connected to the XTAL pin
via a 10 nF capacitor (see Fig.14). In both cases the
frequency is first divided-by-two.
• VPP rises from 0 to 5 V and I/O is enabled
• CLK and RST are enabled.
The time interval between steps 1 and 2 is 16 µs, and
64 µs between steps 2 and 3 (see Fig.7).
If CMD7 (respectively CMD3.5) is LOW, the clock signal
(its frequency again divided by two) is enabled and
buffered before being fed to the CLK pin.
1996 Dec 12
7
Philips Semiconductors
Product specification
Smart card interface
TDA8001
The circuit returns to the IDLE mode on the next rising
edge of the clock.
READ MODE
When the activation sequence is completed and, after the
card has replied its Answer-to-Reset, the TDA8001 will be
in the READ mode. Data is exchanged between the card
and the microcontroller via the I/O line.
PROTECTIONS
Main fault conditions are monitored by the circuit:
• Short-circuit or overcurrent on VCC
• Short-circuit or overcurrent on VPP
• Card extraction during transaction
• Overheating problem
WRITE MODE
Cards with EPROM memory need a programming voltage
(VPP). When it is required to write to the internal memory
of the card, the microcontroller sets one of the VPP12.5,
VPP15 and VPP21 lines LOW, according to the
• VSUP drop-out
programming value given in the Answer-to-Reset.
VPP rises from 5 V to the selected value with a typical slew
rate of 0.38 V/µs. In order to respect the ISO 7816 slopes,
the circuit generates VPP by charging and discharging an
internal capacitor. The voltage on this capacitor is then
amplified by a power stage gain of 5, powered via an
external supply pin VH (30 V max).
• VDD drop-out.
When one of these fault conditions is detected, the circuit
pulls the interrupt line OFF to its active LOW state and
returns to the FAULT mode. The current on I/O is internally
limited to 5 mA.
FAULT MODE (see Fig.9)
DEACTIVATION SEQUENCE (see Fig.8)
When a fault condition is written to the microcontroller via
the OFF line, the circuit initiates a deactivation sequence.
After the deactivation sequence has been completed, the
OFF line is reset to its HIGH state after the microcontroller
has reset the CMDVCC line HIGH.
When the session is completed, the microcontroller sets
the CMDVCC line to its HIGH state. The circuit then
executes an automatic deactivation sequence by counting
the sequencer back:
• RST falls to LOW and CLK is stopped
• I/O(µC) becomes high impedance and VPP falls to 0 V
• VCC falls to 0 V.
V
V
+ V
hys2
th2
th2
V
SUP
V
th3
V
DELAY
t
d
ALARM
MGG818
Fig.4 Alarm and delay as a function of VSUP (CDEL fixes the pulse width).
1996 Dec 12
8
Philips Semiconductors
Product specification
Smart card interface
TDA8001
ENCLK
QH
S
S
CDMS
QI
S
S
QE
CDMTC
QD
D
Q
Q
QB
CK
QA
QG
QF
D
Q
Q
QC
CLK
D
Q
Q
QAA
CK
QCA
CK
XTAL
CMD7 or CDMS = Z Z 1 1 0 0
CMD3.5 or CDMTC = 1 0 1 0 1 0
CLK = 2 4 0 4 2 4
QBA
1/2 CLKOUT
QB
QC
QD
ENCLK
QF
CLK
MGG827
Fig.5 Clock circuitry.
1996 Dec 12
9
Philips Semiconductors
Product specification
Smart card interface
TDA8001
ACTIVATION
IDLE
PDOWN
FAULT
WRITE
READ
DEACTIVATION
MGG820
Fig.6 State diagram.
0
1
2
3
OFF
PRES
DETECT
CMDVCC
VEILLE
(INTERNAL)
INTERNAL
CLOCK
V
CC
I/O
V
PP
CMD3.5
CLK
ENRST
(INTERNAL)
RSTIN
RST
MGG828
t
2
t
act
Fig.7 Activation sequence.
1996 Dec 12
10
Philips Semiconductors
Product specification
Smart card interface
TDA8001
3
2
1
0
CMDVCC
VEILLE
(INTERNAL)
INTERNAL
CLOCK
V
CC
I/O
V
PP
CMD3.5
CLK
ENRST
(INTERNAL)
RSTIN
RST
MGG829
t
de
Fig.8 Deactivation sequence.
3
2
1
0
PRES
DETECT
CMDVCC
VEILLE
(INTERNAL)
INTERNAL
CLOCK
V
CC
I/O
V
PP
CMD3.5
CLK
ENRST
(INTERNAL)
RSTIN
RST
MGG830
t
de
Fig.9 Deactivation after a card extraction during write mode.
11
1996 Dec 12
Philips Semiconductors
Product specification
Smart card interface
TDA8001
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDD
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
supply voltage
−0.3
0
18
V
V
Vx1
voltage on pins VPP21, VPP15, VPP12.5, PRES,
PRES, CMDVCC, OFF, ALARM, DETECT and RSTIN
VDD
VH
voltage on pin VH
0
0
0
0
0
30
V
V
V
V
V
VPP
VSUP
Vx2
Vx3
voltage on pin VPP
VH
voltage on pin VSUP
12
voltage on pins ALARM and DELAY
VSUP
6.0
voltage on pins XTAL, I/O(µC), CLKOUT2, CMD7,
CMD3.5 and CVNC
Vx4
Ptot
voltage on pins I/O, RST, CLK and VCC
continuous total power dissipation
duration < 1 ms
TDA8001;
0
7.0
2
V
−
W
T
amb = +70 °C; note 1;
see Fig.10
TDA8001T;
−
0.92
W
Tamb = +70 °C; note 1;
see Fig.11
Tstg
Ves
storage temperature
−55
−6
+150
+6
°C
kV
electrostatic voltage on pins I/O, VCC, VPP, RST, CLK,
PRES and PRES
electrostatic voltage on other pins
−2
+2
kV
Note
1. Ptot = VDD × (IDD(unloaded) + ∑Isignals) + ICC × (VDD − VCC) + max.{(VH − VPP) × IPP(read) + (VH −VPP) × IPP(write)
}
+ VH ×IH(unloaded) + VSUP × ISUP + (VDD − CVNC) × ICVNC, where ‘signals’ means all signal pins, except supply pins.
1996 Dec 12
12
Philips Semiconductors
Product specification
Smart card interface
TDA8001
MBE256
MBE255
4
3
handbook, halfpage
handbook, halfpage
P
tot
P
tot
(W)
(W)
3
2
2
1
0
1
0
50
0
50
100
150
( C)
50
0
50
100
150
( C)
o
o
T
T
amb
amb
Fig.10 Power derating curve (DIP28).
Fig.11 Power derating curve (SO28).
HANDLING
Every pin withstands the ESD test according to MIL-STD-883C class 3 for card contacts, class 2 for the remaining.
Method 3015 (HBM 1500 Ω, 100 pF) 3 pulses positive and 3 pulse negative on each pin referenced to ground.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
thermal resistance from junction to ambient in free air
SOT117-1
SOT136-1
30
70
K/W
K/W
1996 Dec 12
13
Philips Semiconductors
Product specification
Smart card interface
TDA8001
CHARACTERISTICS
VDD = 12 V; VH = 25 V; VSUP = 5 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VDD
supply voltage
6.7
20
22
35
−
−
18
38
42
55
V
IDD
supply current
idle mode; VDD = 8 V
idle mode; VDD = 18 V
active mode; unloaded
30
34
45
3.0
mA
mA
mA
V
Vth1
threshold voltage for power-on
reset
4.0
Vth4
threshold voltage on VDD (falling)
hysteresis on Vth4
6.0
50
−
−
6.5
V
Vhys4
200
mV
Voltage supervisor
VSUP
ISUP
Vth2
voltage supply for the supervisor
−
−
4.5
10
5.0
1.8
−
−
−
−
−
−
−
V
input current at VSUP
2.4
4.72
80
mA
V
threshold voltage on VSUP (falling)
hysteresis on Vth2
Vhys2
Vth3
mV
V
threshold voltage on DELAY
output current at DELAY
2.35
−5
6
2.65
−2
−
IDEL
pin grounded (charge)
µA
mA
V
VDEL = 4 V (discharge)
VDEL
voltage on pin DELAY
−
3.5
ALARM, ALARM (open-collector outputs)
IOH
VOL
IOL
HIGH level output current on
pin ALARM
VOH = 5 V
IOL = 2 mA
VOL = 0 V
IOH =−2 mA
−
−
−
−
−
25
0.4
−25
−
µA
V
LOW level output voltage on
pin ALARM
−
LOW level output current on
pin ALARM
−
µA
V
VOH
HIGH level output voltage on
pin ALARM
VSUP − 1
td
delay between VSUP and ALARM CDEL = 47 nF; see Fig.4
ALARM pulse width CDEL = 47 nF
−
15
−
−
10
50
µs
ms
tpulse
Interrupt lines OFF and DETECT (open-collector)
IOH
HIGH level output current
LOW level output voltage
VOH = 5 V
IOL = 1 mA
−
−
−
−
25
µA
V
VOL
0.4
Logic inputs (CMDVCC, VPP21, VPP15, VPP12.5, CMD7, CMD3.5, PRES, PRES and RSTIN); note 1
VIL
VIH
IIL
LOW level input voltage
HIGH level input voltage
LOW level input current
−
1.5
−
−
−
−
0.8
−
−10
V
V
VIL = 0 V
µA
1996 Dec 12
14
Philips Semiconductors
Product specification
Smart card interface
TDA8001
SYMBOL
IIH
Reset output to the card (RST)
PARAMETER
CONDITIONS
VIH = 5 V
MIN.
TYP.
MAX.
UNIT
HIGH level input current
−
−
10
µA
VIDLE
VOL
output voltage in IDLE
LOW level output voltage
HIGH level output voltage
−
−
−
−
−
−
−
0.4
0.45
VCC
VCC
2
V
IOL = 200 µA
IOH =−200 µA
IOH =−10 µA
RST enabled; see Fig.7
V
VOH
4.3
V
VCC − 0.7
−
V
tRST
delay between RSTIN and RST
µs
Clock output to the card (CLK)
VIDLE
VOL
output voltage in IDLE
LOW level output voltage
HIGH level output voltage
−
−
−
−
−
−
−
−
−
−
0.4
0.4
VCC
VCC
VCC
14
V
IOL = 200 µA
IOH =−200 µA
IOH =−20 µA
V
VOH
2.4
V
0.7VCC
V
IOH =−10 µA
VCC − 0.7
−
−
45
V
tr
tf
δ
rise time
fall time
CL = 30 pF; note 2
CL = 30 pF; note 2
CL = 30 pF; note 2
ns
ns
%
14
duty factor
55
Card programming voltage (VPP
)
VPP
output voltage
idle mode
−
−
−
−
−
0.4
V
V
V
V
read mode
write mode; IPP < 50 mA P −2.5%(3)
∆IPP/∆t < 40 mA/100 ns;
note 4
VCC − 4%
VCC + 4%
P + 2.5%(3)
P + 2.5%(3)
P − 2.5%(3)
IPP
SR
output current
slew rate
active; from 0 to P (3)
VPP shorted to GND
up or down
−
−
−
−
−50
−100
0.5
mA
mA
0.3
0.4
V/µs
High voltage input (VH)
VH
IH
input voltage
−
4
−
−
30
6
V
input current at VH
idle mode; active mode;
unloaded
mA
P = 5 V
5
−
−
−
−
−
9
mA
mA
mA
mA
V
P = 12.5 V
P = 15 V
P = 21 V
6.5
7
10.5
11
8
12
2.2
VH−VPP
voltage drop
−
1996 Dec 12
15
Philips Semiconductors
Product specification
Smart card interface
TDA8001
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Card supply voltage (VCC
)
VCC
output voltage
idle mode; active mode
ICC < 100 mA
−
4.75
−
−
−
0.4
V
V
V
5.25
5.25
∆IPP/∆t < 100 mA/100 ns; 4.75
note 4
ICC
SR
output current
slew rate
VCC from 0 to 5 V
VCC shorted to GND
up or down
−
−
−
−
−100
−200
0.5
mA
mA
0.3
0.4
V/µs
5 V reference output voltage (CVNC)
VCVNC
ICVNC
output voltage at pin CVNC
output current at pin CVNC
4.5
5.0
5.5
V
−
−
−50
mA
Crystal connection (XTAL)
Rxtal(neg)
negative resistance at pin XTAL
2 MHz < fi < 16 MHz;
note 5
−
−
300
Ω
Vxtal
fxtal
DC voltage at pin XTAL
resonant frequency
external frequency
3.0
4
−
−
−
4.0
16
20
V
MHz
MHz
0
Clock output (CLKOUT2)
fCLKOUT2 frequency on CLKOUT2
VOL
1
−
−
−
−
−
−
8
MHz
V
LOW level output voltage
HIGH level output voltage
IOL = 2 mA
IOH =−200 µA
IOH =−10 µA
CL = 15 pF; note 2
CL = 15 pF; note 2
−
0.4
−
−
25
60
VOH
3.0
4.0
−
V
V
tr, tf
rise and fall times
duty factor
ns
%
δ
40
Data line [I/O, I/O(µC)]
VOH
HIGH level output voltage on
pin I/O
4.5 V < VSUP < 5.5 V;
4.5 V < VI/O(µC) < 5.5 V;
IOH =−20 µA
4.5 V < VSUP < 5.5 V;
4.5 V < VI/O(µC) < 5.5 V;
IOH = −200 µA
4.0
2.4
−
−
VCC + 0.1
V
V
−
VOL
IIL
LOW level output voltage on
pin I/O
II/O = 1 mA;
I/O(µC) grounded
I/O(µC) grounded
−
−
−
−
−
−
100
mV
µA
V
LOW level input current on
pin I/O(µC)
HIGH level output voltage on
pin I/O(µC)
LOW level output voltage on
pin I/O(µC)
LOW level input current on pin I/O I/O grounded
−
−500
VSUP + 0.2
70
VOH
VOL
IIL
4.5 V < VI/O < 5.5 V
4.0
−
II/O(µC) = 1 mA;
I/O grounded
mV
µA
−
−500
1996 Dec 12
16
Philips Semiconductors
Product specification
Smart card interface
TDA8001
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
0.4
UNIT
VIDLE
voltage on pin I/O outside a
session
−
−
V
ZIDLE
Rpu
impedance on pin I/O(µC)
10
8
−
−
MΩ
kΩ
µs
outside a session
internal pull-up resistance
between pin I/O and VCC
10
−
12
0.5
tr, tf
rise and fall times
Ci = Co =30 pF
−
Protections
Tsd
shut-down local temperature
shut-down current at VCC
shut-down current at VPP
current limitation on pin I/O
−
−
−
3
135
−150
−75
−
−
−
−
5
°C
ICC(sd)
mA
mA
mA
IPP(sd)
II/O(lim)
from I/O to I/O(µC)
Timing
tact
tde
t3
activation sequence duration
deactivation sequence duration
see Fig.7
see Fig.8
−
−
−
110
100
−
−
−
µs
µs
µs
start of the window for sending
CLK to the card
70
t5
end of the window for sending
CLK to the card
80
−
−
−
µs
tst
maximum pulse width on
CMDVCC before VCC starts rising
−
30
µs
Notes
1. Pins CMDVCC, VPP21, VPP15, VPP12.5, CMD7, CMD3.5 and PRES are active LOW; pins RSTIN and PRES are
active HIGH.
t1
2. The transition time and duty cycle definitions are shown in Fig.12; δ =
.
--------------
t1 + t2
3. P is the card programming voltage set by pin VPP12.5, VPP15 or VPP21.
4. The tests for dynamic response of both VPP and VCC are performed at 1 Hz, 10 kHz, 100 kHz and 1 MHz, with a
capacitive load of 100 nF.
5. This condition ensures proper starting of the oscillator with crystals having a series resistance up to 100 Ω.
t
t
f
r
V
OH
90%
90%
1.5 V
10%
10%
V
OL
MBH856
t
t
2
1
Fig.12 Definition of transition times.
17
1996 Dec 12
Philips Semiconductors
Product specification
Smart card interface
TDA8001
INTERNAL PIN CONFIGURATION
V
SUP
XTAL
100
µA
100
µA
V
CC
100
µA
DETECT
V
CC
100
µA
I/O(µC)
5 V
I/O
CMD7
as VPP12.5
as VPP12.5
100
µA
V
V
CC
CC
5 kΩ
100 Ω
RSTIN
GND2
RST
CLKOUT2
TDA8001
V
DD
V
CC
V
CC
10 kΩ
CMD3.5
as VPP12.5
50 Ω
CLK
CVNC
VPP21
1350
Ω
as VPP12.5
as VPP12.5
CMDVCC
OFF
650
Ω
20
µA
1.25 V
VPP12.5
ALARM
V
SUP
V
SUP
VPP15
PRES
PRES
ALARM
DELAY
as VPP12.5
as VPP12.5
as VPP12.5
100
µA
2.5 V
2.5
µA
V
H
2.5 V
V
PP
20
µA
100
µA
20
µA
V
H
GND1
V
SUP
V
DD
4690
Ω
1.25 V
V
5310
Ω
as VPP12.5
CC
MBE257
Fig.13 Internal pin configuration.
18
1996 Dec 12
Philips Semiconductors
Product specification
Smart card interface
TDA8001
APPLICATION INFORMATION
+5 V
to 8805
micro-
controller
(1)
100 nF
12 V 25 V
(2)
V
RST
V
CVNC
V
V
H
DD
ALARM ALARM
OFF
SUP
DD
PRES
PRES
INT0
DETECT
I/O(µC)
CMDVCC
VPP15
100 nF
V
C1
C2
C3
C4
C5
CC
RST
CLK
PORT
1
VPP12.5
VPP21
TDA8001
RSTIN
12 V
25 V
10
µF
CMD7
PORT
2
CMD3.5
XTAL1
XTAL2
V
C6
C7
10
µF
PP
100 nF
CLKOUT2
GND2
I/O
80C52
MICRO-
CONTROLLER
GND
C8
CARD
SOCKET
GND
DELAY
GND1
XTAL
MGG831
47 nF
1 kΩ
14 MHz
47 nF
(1) The capacitor should be placed as close as possible to the IC.
(2) If pin VH is not connected to 25 V, it should be connected to VDD
.
Fig.14 Application in a pay TV decoder.
19
1996 Dec 12
Philips Semiconductors
Product specification
Smart card interface
TDA8001
PACKAGE OUTLINES
handbook, full pagewidth
DIP28: plastic dual in-line package; 28 leads (600 mil)
SOT117-1
D
M
E
A
2
A
L
A
1
c
e
w M
Z
b
1
(e )
1
b
M
H
28
15
pin 1 index
E
1
14
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
A
max.
A
A
Z
(1)
(1)
1
2
UNIT
mm
b
b
c
D
E
e
e
L
M
M
w
1
1
E
H
min.
max.
max.
1.7
1.3
0.53
0.38
0.32
0.23
36.0
35.0
14.1
13.7
3.9
3.4
15.80
15.24
17.15
15.90
5.1
0.51
4.0
2.54
0.10
15.24
0.60
0.25
0.01
1.7
0.013
0.009
0.066
0.051
0.020
0.014
1.41
1.34
0.56
0.54
0.15
0.13
0.62
0.60
0.68
0.63
inches
0.20
0.020
0.16
0.067
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-01-14
SOT117-1
051G05
MO-015AH
1996 Dec 12
20
Philips Semiconductors
Product specification
Smart card interface
TDA8001
SO28: plastic small outline package; 28 leads; body width 7.5 mm
SOT136-1
D
E
A
X
c
y
H
v
M
A
E
Z
28
15
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
14
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
18.1
17.7
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
1.27
0.050
1.4
0.25
0.01
0.25
0.1
0.25
0.01
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.71
0.014 0.009 0.69
0.30
0.29
0.42
0.39
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
91-08-13
95-01-24
SOT136-1
075E06
MS-013AE
1996 Dec 12
21
Philips Semiconductors
Product specification
Smart card interface
TDA8001
Several techniques exist for reflowing; for example,
SOLDERING
Introduction
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1996 Dec 12
22
Philips Semiconductors
Product specification
Smart card interface
TDA8001
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 12
23
Philips Semiconductors – a worldwide company
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Tel. +31 40 27 82785, Fax. +31 40 27 88399
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Tel. +64 9 849 4160, Fax. +64 9 849 7811
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Tel. +43 1 60 101, Fax. +43 1 60 101 1210
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
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Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
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Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
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Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
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Tel. +7 095 247 9145, Fax. +7 095 247 9144
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Czech Republic: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
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Spain: Balmes 22, 08007 BARCELONA,
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Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
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Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
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Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
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Ireland: Newstead, Clonskeagh, DUBLIN 14,
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Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
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Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1996
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
537021/1200/02/pp24
Date of release: 1996 Dec 12
Document order number: 9397 750 01384
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